List of Publications

(107 papers (93 papers, 14 Japanese papers), and 2 Books)

（Nagoya University. (2009- )）

41. Spin-orbit torque switching of noncollinear antiferromagnetic antiperovskite manganese nitride Mn₃GaN
T. Hajiri, K. Matsuura, K. Sonoda, E. Tanaka, K. Ueda, and H. Asano
Phys. Rev. Appl., 16 (2021) 024003-1-8.

40. Optoelectronic synapses using vertically aligned graphene/diamond heterojunctions
Y. Mizuno, Y. Ito, and K. Ueda
Carbon, 182 (2021) 669-676.

39. Fabrication of high-quality epitaxial Bi_1-xSb_x films by two-step growth using molecular beam epitaxy
K. Ueda, Y. Hadate, K. Suzuki, and H. Asano
Thin Solid Films, 713 (2020) 138361-1-8.

38. Multibit optoelectronic memory using graphene/diamond (carbon sp²-sp³) heterojunctions and its arithmetic functions
K. Ueda, Y. Mizuno, and H. Asano.
Appl. Phys. Lett., 117 (2020) 092103-1-5.

37. Photomemristors using carbon nanowall/diamond heterojunctions
K. Ueda, H. Itou and H. Asano
J. Mater. Res., 34 (2019) 626-633.

36. Strain effect on magnetic property of antiferromagnetic insulator SmFeO3
M. Kuroda, N. Tanahashi, T. Hajiri, K. Ueda, and H. Asano
AIP Advances 8 (2018) 055814-1-4.

35. Ambipolar transport in Mn₂CoAl by ionic liquid gating
K. Ueda, S. Hirose, and H. Asano
Appl. Phys. Lett., 110 (2017) 202405-1-4.

34. Photo-controllable memristive behavior of graphene/diamond heterojunctions
K. Ueda, S. Aichi, and H. Asano
Appl. Phys. Lett., 108 (2016) 222102-1-5.

33. Ba_ySr_1-yTiO₃ buffer layers for strain tuning of infinite-layer Sr_1-xLa_xCuO₂ thin films
K. Sakuma, M. Ito, Y. He, T. Hajiri, K. Ueda, and H. Asano
Thin Solid Films 612 (2016) 8-13.

32. Magnetization reversal of the domain structure in the anti-perovskite nitride Co₃FeN investigated by high-resolution X-ray microscopy
T. Hajiri, S. Finizio, M. Vafaee, Y. Kuroki, H. Ando, H. Sakakibara, A. Kleibert, L. Howald, F. Kronast, K. Ueda, H. Asano, and M. Klaui
J. Appl. Phys. 119 (2016) 183901-1-6.

31. Direct formation of graphene layers on diamond by high-temperature annealing with a Cu catalyst
K. Ueda, S. Aichi and H. Asano
Diamond Relat. Mater., 63 (2016) 148-152.

30. Controlled conductivity in infinite-layer Sr_0.875La_0.125CuO₂ films sputter-deposited on Ba_ySr_1-yTiO₃ buffer layers
K. Sakuma, M. Ito, T. Hajiri, K. Ueda, and H. Asano
Applied Physics Express 9 (2016) 023101-1-4

29. Strain Effect of a-Axis-Oriented Sr_1-xLa_xCuO₂ Thin Films Grown on LaAlO₃ Substrates　　
Y. He, M. Ito, T. Hajiri, K. Ueda, and H. Asano
IEEE Trans. Mag. 50 (2015) 9000504-1-4

28. High-temperature and high-voltage characteristics of Cu/diamond Schottky diodes
K. Ueda, K. Kawamoto, and H. Asano
Diamond Relat. Mater. 57 (2015) 28-31.

27. Magnetic properties and anisotropic magnetoresistance of antiperovskite nitride Mn₃GaN/Co₃FeN exchange-coupled bilayers
H. Sakakibara, H. Ando, Y. Kuroki, S. Kawai, K. Ueda, and H. Asano
J. Appl. Phys., 117 (2015) 17D725-1-4.

26. Deposition and reduction of infinite-layer Sr_1-x La_xCuO₂ films
K. Sakuma, Y. He, K. Ueda, and H. Asano
Jpn. J. Appl. Phys. 54 (2015) 053101-1-4

25. Low temperature growth of Co₂MnSi films on diamond semiconductors by ion-beam assisted sputtering
M. Nishiwaki, K. Ueda, and H. Asano
J. Appl. Phys., 117 (2015) 17D719-1-4.

24. Preparation and properties of Sr_0.9La_0.1CuO₂ thin films grown on Ba_ySr_1-yTiO₃ layers
Y. He, M. Ito, K. Sakuma, K. Ueda, and H. Asano
IEEE Trans. Appl. Super. 25 (2015) 7501204-1-4.

23. Preparation and properties of ferromagnetic antiperovskite Co₃FeN thin films
H. Sakakibara, H. Ando, T. Miyawaki, K. Ueda, and H. Asano
IEEE Trans. Mag. 50 (2014) 2600404-1-4.

22. Fabrication of epitaxial Co₂MnSi films on lattice-matched MgAl₂O₄ substrates by ion-beam assisted sputtering
K. Ueda, M. Nishiwaki, T. Soumiya, and H. Asano
Thin Solid films, 570 (2014) 134-137.

21. High-temperature characteristics and stability of Cu/diamond Schottky diodes
K. Ueda, K. Kawamoto, and H. Asano
Jpn. J. Appl. Phys., 53 (2014) 04EP05-1-4.

20. Ferromagnetic Schottky junctions using half-metallic Co₂MnSi/diamond heterostructures
K. Ueda, T. Soumiya, M. Nishiwaki, and H. Asano
Appl. Phys. Lett., 103 (2013) 052408-1-4.

19. Reactively sputtered MgAl₂O₄ barrier layers for Heusler tunnel junctions
K. Inagaki, N. Fukatani, K. Mari, H. Fujita H. Miyawaki, K. Ueda, and H. Asano
J. Kor. Phys. Soc., 63 (2013) 830-834.

18. Fabrication and properties of double perovskite SrLaVRuO₃
R. Zenzai, T. Miyawaki, K. Ueda, and H. Asano
J. Kor. Phys. Soc., 63 (2013) 787-790.

17. Structural and magnetic properties of antiferromagnetic Heusler Ru₂MnGe Epitaxial thin films
N. Fukatani, H. Fujita H. Miyawaki, K. Ueda, and H. Asano
J. Kor. Phys. Soc., 63 (2013) 711-715.

16. Inversion of magnetoresistance in La1-xSrxMnO3 /Nb-doped SrTiO₃/CoFe junctions
K. Ueda, K. Tozawa, and H. Asano
J. Kor. Phys. Soc., 63 (2013) 706-710.

15. Epitaxial growth and physical properties of Heusler/perovskite heterostructures
K. Kobayashi, K. Ueda, N. Fukatani, H. Kawada, K. Sakuma, and H. Asano
J. Kor. Phys. Soc., 63 (2013) 620-623.

14. Preparation and properties of inverse perovskite Mn₃GaN thin films and heterostructures
H. Tashiro, R. Suzuki, T. Miyawaki, K. Ueda, and H. Asano
J. Kor. Phys. Soc., 63 (2013) 299-301.

13. The effect of magnetocrystalline anisotropy on the domain structure of patterned Fe₂CrSi Heusler alloy thin films
T. Miyawaki, M. Foerster, S. Finizio, C. A. F. Vaz, M.-A. Mawass, K. Inagaki, N. Fukatani, L. L. Guyader, F. Nolting, K. Ueda, H. Asano, and M. Klaui
J. Appl. Phys., 114 (2013) 073905-1-5.

12. High-temperature characteristics of Ag and Ni/diamond Schottky diodes
K. Ueda, K. Kawamoto, T. Soumiya and H. Asano
Diamond Relat. Mater., 38 (2013) 41-44.

11. Growth and properties of a-axis oriented thin films of infinite-layer Sr1-xLaxCuO₂
H. Akatsuka, K. Sakuma, T. Miyawaki, K. Ueda, and H. Asano
IEEE Trans. Appl. Super. 23 (2013) 7501204-1-4.

10. Structural and magnetic properties in Heusler-type ferromagnet/antiferromagnet bilayers
N. Fukatani, K. Inagaki, T. Miyawaki, K. Ueda, and H. Asano
J. Appl. Phys. 113 (2013) 17C103-1-3.

9. Antiferromagnetic Heusler Ru2MnGe epitaxial thin films showing Neel temperatures up to 353 K
N. Fukatani, H. Fujita, T. Miyawaki, K. Ueda, and H. Asano
IEEE Trans. Mag. 48 (2012) 3211-3214.

8. Ferromagnetic Schottky junctions using diamond semiconductors
K. Ueda, T. Soumiya and H. Asano
Diamond Relat. Mater. 25 (2012), 159-162.

7. Structural and electrical properties of half-Heusler La-Pt-Bi thin films grown by 3-source magnetron co-sputtering
T. Miyawaki, N. Sugimoto, N. Fukatani, T. Yoshihara, K. Ueda, N. Tanaka, and H. Asano1
J. Appl. Phys. 111 (2012) 07E327-1-3

6. Fabrication of MgAl₂O₄ Thin Films on Ferromagnetic Heusler Alloy Fe₂CrSi by Reactive Magnetron Sputtering
N. Fukatani, K. Inagaki, K. Mari, H. Fujita, T. Miyawaki, K. Ueda, and H. Asano
Jpn. J. Appl. Phys. 51 (2012) 02BM04-1-4.

5. Epitaxial thin films of ordered double perovskite SrLaVMoO₆
MRS proceedings vol. 1454 (2012) 21-26.
K. Sanbou, K. Sakuma, T. Miyawaki, K. Ueda and H. Asano

4. Magnetic and electric properties of double perovskite Sr_2-xLa_xVMoO₆
H. Matsushima, H. Gotoh, Y. Takeda, K. Ueda, and H. Asano
Jpn. J. Appl. Phys. 50 (2011) 103004-1-5.

3. Inter-layer exchange coupling in Fe₂CrSi/Fe₂VSi multilayers fabricated on MgAl₂O₄ substrates”
T. Miyawaki, K. Takahashi, N. Fukatani, K. Ueda, and H. Asano
IEEE Transactions on Magnetics, 47 (2011) 2643-2645.

2. Epitaxial strain and antiferromagnetism in Heusler Fe₂VSi thin films
N. Fukatani, K. Ueda, H. Asano
J. Appl. Phys. 109 (2011) 073911-1-4.

1. Fabrication and physical properties of double perovskite SrLaVMoO₆ thin films
H. Matsushima, H. Gotoh, T. Miyawaki, K. Ueda, and H. Asano
J. Appl. Phys. 109 (2011) 07E321-1-3.

（NTT Basic Research Lab. (2001-2009)）

(Papers)

34. High temperature operation of diamond field effect transistors
K. Ueda, Y. Yamauchi, M. Kasu
Jpn. J. Appl. Phys.,49 (2010) 04DF16-1-4.

33. Structural and electrical properties of H-terminated diamond field-effect transistor
M. Kubovic, M. Kasu, Y. Yamauchi, K. Ueda and H. Kageshima
Diamond Rel. Mater. 18 (2009) 796-799.

32. Beryllium-doped single-crystal diamond grown by microwave plasma CVD
K. Ueda, M. Kasu
Diamond Rel. Mater. 18 (2009) 121-123.

31. Diamond RF FETs and other approaches to electronics
M. Kasu, K. Ueda, H. Kageshima, Y. Taniyasu
Physica Status Solidi (c) 5 (2008) 3165-3168

30. RF Equivalent-circuit analysis of p-type diamond field-effect transistors with hydrogen surface termination
M. Kasu, K. Ueda, H. Kageshima, Y. Yamauchi
IEICE Trans. Electron. E91-C (2008) 1042-1049

29. Diamond FETs on boron-implanted and high-pressure and high-temperature annealed homoepitaxial diamond
K. Ueda, Y. Yamauchi, M. Kasu
Physica Status Solidi (c) 5 (2008) 3175-3177.

28. High-pressure and high-temperature annealing of diamond ion-implanted with various elements
K. Ueda, M. Kasu
Diamond Rel. Mater., 17 (2008) 1269-1272.

27. Thick diamond layers angled by polishing to reveal defect and impurity depth profiles
A. Tallaire, M. Kasu, K. Ueda
Diamond Rel. Mater., 17 (2008) 506-510.

26. High-pressure and high-temperature annealing effects of boron-implanted diamond
K. Ueda, M. Kasu
Diamond Rel. Mater., 17 (2008) 502-505.

25. Gate interfacial layer in hydrogen-terminated diamond field-effect transistors
M. Kasu, K. Ueda, H. Kageshima, Y. Yamauchi
Diamond Rel. Mater., 17 (2008) 741-744.

24. Origin of growth defects in CVD diamond epitaxial films
A. Tallaire, M. Kasu, K. Ueda, T. Makimoto
Diamond Rel. Mater. 17 (2008) 60-65.

23. Diamond-based RF power transistors: Fundamentals and applications 
M. Kasu, K. Ueda, Y. Yamauchi, A. Tallaire, T. Makimoto
Diamond Related Materials, 16 (2007) 1010-1015.

22. High-pressure and high-temperature annealing as an activation method for ion-implanted dopants in diamond 
K. Ueda, M. Kasu, T. Makimoto
Appl. Phys. Lett. 90 (2007) 122102-1-3.

21. Interface microstructure of MgB₂/Al-AlO_x/MgB₂ Josephson junctions studied by cross-sectional transmission electron microscopy
K. Ueda, S. Saito, K. Semba, T. Makimoto and M. Naito
Jpn. J. Appl. Phys. 46 (2007) L271-L273

20. Gate capacitance-voltage characteristics of submicron-long-gate diamond field-effect transistors with hydrogen surface termination
M. Kasu, K. Ueda, Y. Yamauchi, T. Makimoto
Appl. Phys. Lett. 90 (2007) 043509-1-3.

19. Terahertz mixing in MgB₂ microbolometers
S. Cherednichenko, V. Drakinskiy , Kenji Ueda , Michio Naito
Appl. Phys. Lett. 90 (2007) 023507-1-3.  

18. High-pressure and high-temperature annealing effects on CVD homoepitaxial diamond films
K. Ueda, M. Kasu, A. Tallaire, T. Makimoto
Diamond Related Materials, 15 (2006) 1789-1791.

17. Characterization of high-quality polycrystalline diamond and its high FET performance
K. Ueda, M. Kasu, Y. Yamauchi, T. Makimoto, M. Schwitters, D. J. Twitchen, G. A. Scarsbrook, and S. E. Coe
Diamond Related Materials, 15 (2006) 1954-1957.

16. Diamond FET using high-quality polycrystalline diamond with fT of 45 GHz and fmax of 120 GHz
K. Ueda, M. Kasu, Y. Yamauchi, T. Makimoto, M. Schwitters, D. J. Twitchen, G. A. Scarsbrook, and S. E. Coe
IEEE Electron Dev. Lett., 27 (2006) 570-572.

15. Low-temperature growth of MgB2 thin films with Tc above 38 K
K. Ueda and T. Makimoto
Jpn. J. Appl. Phys., 45 (2006) 5738-5741.

14. Temperature dependent DC and RF performance of diamond MESFET
H. Ye, M. Kasu, K. Ueda, Y. Yamauchi, N. Maeda, S. Sasaki and T. Makimoto
Diamond Related Materials, 15 (2006) 787-791

13. High RF output power for H-terminated diamond FETs
M. Kasu, K. Ueda, H. Ye, Y. Yamauchi, S. Sasaki and T. Makimoto
Diamond Related Materials, 15 (2006) 783-786.

12. RF performance of diamond MESFET at elevated temperatures and its equivalent circuit
H. Ye, M. Kasu, K. Ueda, Y. Yamauchi, N. Maeda, S. Sasaki and T. Makimoto
Jpn. J. Appl. Phys, 45 (2006) 3609-3613.　　

11. 2W/mm output power density at 1GHz for diamond MESFETs
M. Kasu, K. Ueda, H. Ye, Y. Yamauchi, S. Sasaki and T. Makimoto
Electronics letters, 41 (2005) 1249-1250

10. All-MgB₂ Josephson tunnel junctions
K. Ueda, S. Saito, K. Semba, T. Makimoto and M. Naito
Appl. Phys. Lett., 86 (2005) 172502-1-3

9. Prospects and problems in fabrication of MgB₂ Josephson junctions
K. Ueda and M. Naito
IEICE Trans, Electron, E88-C, (2005) P226-231

8. MgB₂ thin films for superconducting electronics
M. Naito and K. Ueda
Supercond. Sci. Technol., 17 (2004) R1-R18.

7. Tunnel junctions on as-grown MgB₂ thin films
K. Ueda and M. Naito
Physica C 408-410 (2004) 134-135.

6. In-situ growth of superconducting MgB₂ thin films by molecular-beam epitaxy
K. Ueda and M. Naito
J. Appl. Phys. 93 (2003) 2113-2120.

5. Tunnel junctions on as-grown superconducting MgB₂ thin films
K. Ueda, H. Yamamoto and M. Naito
IEEE trans, Appl. Superconductors, in press.

4. Synthesis and photoemission study of as-grown superconducting MgB₂ thin films
K. Ueda, H. Yamamoto and M. Naito
Physica C, 378-381 (2002) 225-228.

3. As-grown superconducting MgB₂ thin films prepared by molecular-beam epitaxy
K. Ueda and M. Naito
Appl. Phys. Lett., 79 (2001) 2046-2048.

2. Single-crystalline superconducting thin films of electron-doped infinite-layer
compounds grown by molecular-beam epitaxy
S. Karimoto, K. Ueda, M. Naito and T. Imai
Appl. Phys. Lett., 79 (2001) 2767-2769

1. Superconducting thin films of electron-doped infinite-layer Sr_1-xLa_xCuO₂ grown by molecular-beam epitaxy
S. Karimoto, K. Ueda, M. Naito and T. Imai
Physica C, 378-381 (2002) 127-130


(Books)
2. Growth of superconducting MgB₂ thin films
K. Ueda and M. Naito
Studies of high temperature superconductors, 44 (2003) 237-270, Nova Science Publishers, Inc.

1. Low temperature synthesis of superconducting MgB₂ thin films for electronic applications
K. Ueda and M. Naito
New Topics in Josephson Junctions and Superconductivity Research, chapter 5 (2007) 135-160, Nova Science Publishers, Inc.


（Osaka. Univ. (1996 - 2001)）

18. Magnetic and electric properties of transition-metal-doped ZnO films
K. Ueda, H. Tabata and T. Kawai
Appl. Phys. Lett., 79 (2001) 988-990.

17. Atomic ordering in the LaFe_0.5Mn_0.5O₃ solid solution film
K. Ueda, Y. Muraoka, H. Tabata and T. Kawai
Appl. Phys. Lett., 78 (2001) 512-514.

16. Control of magnetic properties in LaCrO₃-LaFeO₃ artificial superlattices.
K. Ueda, H. Tabata and T. Kawai
J. Appl. Phys., 89 (2001) 2847-2851.

15. Fabrication of the low-resistive p-type ZnO by codoping method.
M. Joseph, H. Tabata, H. Saeki, K. Ueda, T. Kawai
Physica B, 302-303(2001) 140-148.

14. Control of the magnetic and electric properties of the low dimensional SrRuO₃-BaTiO₃ superlattices
K. Ueda, H. Saeki, H. Tabata and T. Kawai
Solid State Comm., 116 (2000) 221.

13. Preparation and thickness dependence of magnetic properties of (111)-oriented Mg_1.5FeTi_0.5O₄ spinel films on sapphire by pulsed laser deposition technique
Y. Muraoka, K. Ueda, H. Tabata and T. Kawai
Vacuum, 59 (2000) 622-627

12. Coexistence of ferroelectricity and ferromagnetism in BiFeO₃-BaTiO₃ thin films at room temperature
K. Ueda, H. Tabata and T. Kawai
Appl. Phys. Lett., 75 (1999) 555-557.

11. Atomic arrangement and magnetic properties of LaFeO₃-LaMnO₃ artificial superlattices
K. Ueda, H. Tabata and T. Kawai
Phys. Rev. B, 60 (1999) R12561-12564.

10. Artificial control of spin order and magnetic properties in LaCrO₃-LaFeO₃ superlattices
K. Ueda, H. Tabata and T. Kawai
Jpn. J. Appl. Phys., 38 (1999) 6690-6693.

9. Size effect of ferroelectric and ferromagnetic properties of Bi-based perovskite type materials
H. Tabata, K. Ueda and T. Kawai
Mater. Res. Soc. Proc. 541 (1999) 437.

8. Artificial Control of Magnetic and Magnetoresistive Properties in the Perovskite
Manganites Superlattices and Their Multilayers with Organics
H. Tabata, K. Ueda H. Matsui, H. Saeki, and T. Kawai
Mater. Res. Soc. Proc. 602 (1999) 339-348

7. Ferromagnetism in LaFeO₃-LaCrO₃ superlattices
K. Ueda, H. Tabata and T. Kawai
Science, 280 (1998) 1064-1066.

6. Construction of ferroelectric and/or ferromagnetic superlattices by laser MBE and their physical properties
H. Tabata, K. Ueda and T. Kawai
J. Mat. Sci. & Eng. B, 56 (1998) 140-146.

5. Formation of ferromagnetic/ferroelectric superlattices by a laser MBE and their electric and magnetic properties
H. Tabata, K. Ueda and T. Kawai
Mater. Res. Soc. Proc., 494 (1998) 201-212.

4. Theoretical study and comparison with experiments for atacamite Cu₂Cl(OH)₃
K. Ueda, S. Takamizawa, W. Mori S. Kubo and K. Yamaguchi
Mol. Cryst. Liq. Cryst., 306 (1997) 33-40.

3. Formation of ferroelectric/ferromagnetic functionally grated materials by Laser MBE and their physical properties
H. Tabata, H. Tanaka, K. Ueda and T. Kawai
Proc. of 9th Functionally Grated Materials Symp., (1997) 247-252.

2. Magnetic properties of basic copper (II) formates
K. Ueda, S. Takamizawa, W. Mori and K. Yamaguchi
Mol. Cryst. Liq. Cryst., 286 (1996) 17-22

1. Calculation of magnetization by path integral method II
T. Kawakami, H. Nagao, K. Ueda, W. Mori and K. Yamaguchi
Mol. Cryst. Liq. Cryst., 286 (1996) 177-184.


(Japanese papers)

14. イオンビームアシストスパッタ法によるCo₂MnSi薄膜の低温エピタキシャル成長
植田研二、浅野秀文
電子情報通信学会技術研究報告（信学技報）（IEICE Technical Report vol. 114 No. 234 (2014) MR2014-17

13. ダイヤモンド半導体を用いた強磁性ショットキー接合の作製
宗宮嵩、植田研二、深谷直人、宮脇哲也、浅野秀文
J. Magn. Soc. Jpn., 36 (2012) 297-300.

12 ホイスラーペロブスカイト積層構造のマルチフェロイック特性
小林耕平、深谷直人、宮脇哲也、植田研二、浅野秀文
J. Magn. Soc. Jpn., 36 (2012) 213-216.

11. 逆ペロブスカイトMn3GaN薄膜の構造と電気特性
田代裕樹、宮脇哲也、植田研二、浅野秀文
J. Magn. Soc. Jpn., 36 (2012) 188-191.

10. 3元同時スパッタリング法によるLa-Pt-Bi薄膜の作製
杉本望実、深谷直人、吉原健彦、宮脇哲也、植田研二、田中信夫、浅野秀文
J. Magn. Soc. Jpn., 36 (2012) 179-182.

9. MgAl2O4基板上に成長した格子整合系ホイスラー合金人工格子の結晶構造と磁気特性の相関
宮脇哲也、高橋一成、深谷直人、植田研二、浅野秀文
電子情報通信学会技術研究報告. MR, 磁気記録 110(438), 27-31, 2011-03-04 

8. CoFe2O4/Ba0.7Sr0.3TiO3複合構造のマルチフェロイック特性
田代裕樹、小林耕平、小林智、宮脇哲也、植田研二、浅野秀文
電子情報通信学会技術研究報告. MR, 磁気記録 110(438), 33-38, 2011-03-04

7. La_0.7Sr_0.3MnO₃/Bi_1-xBa_xFeO₃接合におけるスピンフィルター効果
小林　智、立木　翔治、吉本　耕助、杉本　靖典、竹田　陽一、植田　研二、浅野　秀文
J. Magn. Soc. Jpn., 34 (2010) 499-502.

6. Fe2VSi薄膜の歪み効果と電気伝導特性
深谷直人、植田研二、浅野秀文
J. Magn. Soc. Jpn., 35 (2011) 260-263.

5. 反強磁性体SrLaVMoO₆の構造とスピン分極率：松島宏行、後藤大尚、J.Zhong、竹田陽一、植田研二、浅野秀文、A. Rajanikanth、宝野和博
J. Magn. Soc. Jpn., 34 (2010) 1-4.

4. 格子歪みによるFe₂VSi薄膜の反強磁性の安定化
深谷直人、竹田陽一、植田研二、浅野秀文
J. Magn. Soc. Jpn., 34 (2010) 307-310.

3. MgAl₂O₄基板上のホイスラー合金薄膜・人工格子の構造と磁性
竹田陽一、深谷直人、高橋一成、藤田裕人、植田研二、浅野秀文
IEICE Technical Report MR2009-66 (2010-3)　45-51

2. 水素終端ダイヤモンドFETのゲート金属界面
嘉数誠、植田研二、影島博之
表面科学29 (2008) 159-163

1.　水素終端ダイヤモンド高周波電力ＦＥＴの現状と課題
嘉数誠、植田研二、M. Kubovic
ニューダイヤモンド、Vol.25　No.1、(2009) p3

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